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MJE:=0.69;

VJE:=0.69;

CCS:=1e-12;

RJ:=0.01;

writeln(' It is default parameters of transistor KT316B (Y/N)
');

gotoxy(col+3,row+3); write('[Forward beta] '); gotoxy(col+39,row+3); write(BF);

gotoxy(col+3,row+4); write('[Revers beta] '); gotoxy(col+39,row+4); write(BR);

gotoxy(col+3,row+5); write('[Temp. coef. of BETTA (PPM)] '); gotoxy(col+39,row+5); write(TCB);

gotoxy(col+3,row+6); write('[Saturation Current] '); gotoxy(col+39,row+6); write(Is0);

gotoxy(col+3,row+7); write('[Energy gap (0.6 to 1.3)] '); gotoxy(col+39,row+7); write(EG);

EG:=EG*1.6e-19;

gotoxy(col+3,row+8); write('[CJC0] '); gotoxy(col+39,row+8); write(CJC0);

gotoxy(col+3,row+9); write('[CJE0] '); gotoxy(col+39,row+9); write(CJE0);

gotoxy(col+3,row+10); write('[Base resistance] '); gotoxy(col+39,row+10); write(RB);

gotoxy(col+3,row+11); write('[Collector resistance] '); gotoxy(col+39,row+11); write(RC);

gotoxy(col+3,row+12); write('[Early Valtage] '); gotoxy(col+39,row+12); write(VA);

gotoxy(col+3,row+13); write('[TAU forward] '); gotoxy(col+39,row+13); write(TAUF);

gotoxy(col+3,row+14); write('[TAU reverse] '); gotoxy(col+39,row+14); write(TAUR);

gotoxy(col+3,row+15); write('[MJC] '); gotoxy(col+39,row+15); write(MJC);

gotoxy(col+3,row+16); write('[VJC] '); gotoxy(col+39,row+16); write(VJC);

gotoxy(col+3,row+17); write('[MJE] '); gotoxy(col+39,row+17); write(MJE);

gotoxy(col+3,row+18); write('[VJE] '); gotoxy(col+39,row+18); write(VJE);

gotoxy(col+3,row+19); write('[CSUB] '); gotoxy(col+39,row+19); write(CCS);

gotoxy(col+3,row+20); write('[Minimum junction resistance] '); gotoxy(col+39,row+20); write(RJ);

gotoxy(col+6,row+25); write('Accept parameters of transistor (Y/N) '); an:=readkey; case an of 'y': goto 3;

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